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DIODES INC.  2N7002DW-7-F  Dual MOSFET, Dual N Channel, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V

DIODES INC. 2N7002DW-7-F
Technical Data Sheet (211.52KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N7002DW-7-F is a dual N-channel enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for high efficiency power management applications.
  • Low ON-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching performance
  • Low input/output leakage
  • Ultra-small surface-mount package
  • Halogen-free
  • UL94V-0 Flammability rating

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
115mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
13.5ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
200mW
Transistor Case Style:
SOT-363
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006

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