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DIODES INC.  BSS138-7-F  MOSFET Transistor, N Channel, 200 mA, 50 V, 1.4 ohm, 10 V, 1.2 V

DIODES INC. BSS138-7-F
Technical Data Sheet (200.10KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSS138-7-F is a 50V N-channel enhancement mode MOSFET with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic (UL94V-0). The MOSFET features low gate threshold voltage, fast switching speed and low input capacitance.
  • Low on-resistance
  • Low input/output leakage
  • Halogen and antimony-free
  • Green device
  • Qualified to AEC-Q101 standards for high reliability

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
200mA
Drain Source Voltage Vds:
50V
On Resistance Rds(on):
1.4ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.2V
Power Dissipation Pd:
300mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Motor Drive & Control;
  • Power Management;
  • Aerospace, Defence, Military

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000008

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