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DIODES INC.  BSS84-7-F  MOSFET Transistor, P Channel, 130 mA, -50 V, 10 ohm, -5 V, -800 mV

DIODES INC. BSS84-7-F
Technical Data Sheet (169.61KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSS84-7-F is a P-channel enhancement-mode MOSFET with solderable matte tin plated terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
  • Low ON-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Halogen-free, Green device
  • Moisture sensitivity level 1 as per J-STD-020
  • UL94V-0 Flammability rating

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
130mA
Drain Source Voltage Vds:
-50V
On Resistance Rds(on):
10ohm
Rds(on) Test Voltage Vgs:
-5V
Threshold Voltage Vgs:
-800mV
Power Dissipation Pd:
300mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Aerospace, Defence, Military;
  • Commercial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000008

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