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DIODES INC.  DMG3414U  MOSFET Transistor, Enhancement Mode, N Channel, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV

DIODES INC. DMG3414U
Technical Data Sheet (199.18KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The DMG3414U is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard.
  • Low ON-resistance
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Halogen-free, Green device
  • Qualified to AEC-Q101 standards for high reliability
  • Moisture sensitivity level 1 as per J-STD-020
  • UL94V-0 Flammability rating

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
4.2A
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.019ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
500mV
Power Dissipation Pd:
780mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Automotive;
  • Aerospace, Defence, Military

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.040794