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DIODES INC.  DMMT5551S  Bipolar Transistor Array, Dual, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26

DIODES INC. DMMT5551S
Technical Data Sheet (114.81KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
160V
Power Dissipation Pd:
300mW
DC Collector Current:
200mA
DC Current Gain hFE:
80hFE
Transistor Case Style:
SOT-26
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000018

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