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DIODES INC.  DMN2050L  MOSFET Transistor, Enhancement Mode, N Channel, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV

DIODES INC. DMN2050L
Technical Data Sheet (221.04KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The DMN2050L is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard.
  • Low ON-resistance
  • Very low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Halogen-free, Green device
  • Qualified to AEC-Q101 standards for high reliability
  • Moisture sensitivity level 1 as per J-STD-020
  • UL94V-0 Flammability rating

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
5.9A
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.024ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
450mV
Power Dissipation Pd:
1.4W
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Aerospace, Defence, Military;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.040794