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DIODES INC.  DMN3007LSS  MOSFET Transistor, Enhancement Mode, N Channel, 16 A, 30 V, 0.005 ohm, 10 V, 1.3 V

DIODES INC. DMN3007LSS
Technical Data Sheet (151.71KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The DMN3007LSS is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard.
  • Low ON-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Green device
  • Qualified to AEC-Q101 standards for high reliability
  • Moisture sensitivity level 1 as per J-STD-020
  • UL94V-0 Flammability rating

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
16A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.005ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.3V
Power Dissipation Pd:
2.5W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Aerospace, Defence, Military;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000907

Alternatives

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