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DIODES INC.  DMN6068SE  MOSFET Transistor, Enhancement Mode, N Channel, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V

DIODES INC. DMN6068SE
Technical Data Sheet (299.04KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The DMN6068SE is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
  • Low ON-resistance
  • 100% Unclamped inductive switch (UIS) test in production
  • Fast switching speed
  • Halogen-free, Green device
  • Moisture sensitivity level 1 as per J-STD-020
  • UL94V-0 Flammability rating

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
5.6A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.068ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
16W
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Aerospace, Defence, Military;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001588

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