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DIODES INC.  FCX605TA  Bipolar (BJT) Single Transistor, Darlington, NPN, 120 V, 150 MHz, 1 W, 1 A, 100000 hFE

DIODES INC. FCX605TA
Technical Data Sheet (163.10KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FCX605TA is a NPN silicon high voltage Darlington Transistor provides very efficient performance combining low VCE (sat) and very high Hfe to give extremely low on state losses at 120V operation. It is ideal for use in a variety of efficient driving functions including motors, lamps relays and solenoids and will also benefit circuits requiring high output current switching.
  • Low saturation voltage
  • 2K @ 1A Minimum Hfe
  • -55 to 150°C Operating temperature range

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
120V
Transition Frequency ft:
150MHz
Power Dissipation Pd:
1W
DC Collector Current:
1A
DC Current Gain hFE:
100000hFE
Transistor Case Style:
SOT-89
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Lighting;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000127