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DIODES INC.  ZXMHC3F381N8TC  Dual MOSFET, H-Bridge, N and P Channel, 3.98 A, 30 V, 0.033 ohm, 10 V, 1 V

DIODES INC. ZXMHC3F381N8TC
Technical Data Sheet (732.75KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The ZXMHC3F381N8TC is a N/P-channel complementary enhancement-mode MOSFET H-Bridge offers low ON-resistance achievable with low gate drive. It is ideal for DC to AC inverter applications.

Product Information

Transistor Polarity:
N and P Channel
Continuous Drain Current Id:
3.98A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.033ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
870mW
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000302

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