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DIODES INC.  ZXMP3A16GTA  MOSFET Transistor, Enhancement Mode, P Channel, -5.4 A, -30 V, 0.045 ohm, -10 V, -1 V

DIODES INC. ZXMP3A16GTA
Technical Data Sheet (241.40KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The ZXMP3A16GTA is a P-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
  • Low ON-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Halogen-free, Green device
  • Qualified to AEC-Q101 standards for high reliability
  • UL94V-0 Flame-rated moulded plastic case
  • Moisture sensitivity level 1 as per J-STD-020

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-5.4A
Drain Source Voltage Vds:
-30V
On Resistance Rds(on):
0.045ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-1V
Power Dissipation Pd:
2W
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Aerospace, Defence, Military;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.000112