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DIODES INC.  ZXMP6A17GTA  MOSFET Transistor, P Channel, -3 A, -60 V, 0.096 ohm, -10 V, -1 V

DIODES INC. ZXMP6A17GTA
Technical Data Sheet (467.41KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The ZXMP6A17GTA is a P-channel Enhancement Mode MOSFET with matte tin annealed over copper lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
  • Fast switching
  • Low gate drive
  • Low input capacitance
  • Level-1 per J-STD-020 moisture sensitivity
  • AEC-Q101 Qualified
  • Green product
  • PPAP capable

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-3A
Drain Source Voltage Vds:
-60V
On Resistance Rds(on):
0.096ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-1V
Power Dissipation Pd:
2W
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.001361