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DIODES INC.  ZXMS6005SGTA  MOSFET Transistor, Enhancement Mode, N Channel, 2 A, 60 V, 0.15 ohm, 5 V, 1 V

DIODES INC. ZXMS6005SGTA
Technical Data Sheet (556.70KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The ZXMS6005SGTA is an INTELLIFET™ N-channel self-protected enhancement-mode MOSFET with logic level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic level functionality. It is ideal as a general purpose switch driven from 3.3 or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.
  • Compact high power dissipation package
  • Low input current
  • Logic level input
  • Short circuit protection with auto restart
  • Over voltage protection (active clamp)
  • Thermal shutdown with auto restart
  • Overcurrent protection
  • Input protection (ESD)
  • High continuous current rating

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
2A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.15ohm
Rds(on) Test Voltage Vgs:
5V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
1W
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000102

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