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FAIRCHILD SEMICONDUCTOR  2N7000_D26Z  MOSFET Transistor, N Channel, 200 mA, 60 V, 5 ohm, 10 V, 2.1 V

FAIRCHILD SEMICONDUCTOR 2N7000_D26Z
Technical Data Sheet (436.61KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using Fairchild's proprietary high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.
  • High density cell design for extremely low RDS (ON)
  • Voltage controlled small signal switch
  • Rugged and reliable
  • High saturation current capability
  • 60V Drain gate voltage (VDGR)
  • ±20V Continuous gate source voltage (VGSS)
  • 312.5°C/W Junction-to-ambient thermal resistance

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
200mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
5ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.1V
Power Dissipation Pd:
400mW
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

Find similar products  grouped by common attribute

Applications

  • Industrial;
  • Motor Drive & Control;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000318

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