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FAIRCHILD SEMICONDUCTOR  FCP13N60N  Power MOSFET, N Channel, 13 A, 600 V, 0.244 ohm, 10 V, 2 V

FAIRCHILD SEMICONDUCTOR FCP13N60N
Technical Data Sheet (743.02KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FCP13N60N is a N-channel SupreMOS® high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
  • Ultra low gate charge (Qg = 30.4nC)
  • Low effective output capacitance (Coss.eff = 145pF)
  • 100% avalanche tested

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
13A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
0.244ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
116W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management;
  • Communications & Networking;
  • Lighting;
  • Alternative Energy

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.007031

Associated Products