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FAIRCHILD SEMICONDUCTOR  FDC6301N..  Dual MOSFET, Dual N Channel, 220 mA, 25 V, 5 ohm, 4.5 V, 850 mV

FAIRCHILD SEMICONDUCTOR FDC6301N..
Technical Data Sheet (473.13KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FDC6301N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. It is very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this N-channel FET's can replace several digital transistors, with a variety of bias resistors.
  • Very low level gate drive requirements allowing direct operation in 3V circuits
  • Gate-source Zener for ESD ruggedness
  • -0.5 to 8V Gate to source voltage
  • 0.22A Continuous drain/output current
  • 0.5A Pulsed drain/output current

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
220mA
Drain Source Voltage Vds:
25V
On Resistance Rds(on):
5ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
850mV
Power Dissipation Pd:
900mW
Transistor Case Style:
SuperSOT
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Alternatives

DUAL N CHANNEL MOSFET, 25V, SUPER SOT-6

FAIRCHILD SEMICONDUCTOR

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