Low

FDC6301N.. - 

Dual MOSFET, Dual N Channel, 220 mA, 25 V, 5 ohm, 4.5 V, 850 mV

FAIRCHILD SEMICONDUCTOR FDC6301N..

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Manufacturer Part No:
FDC6301N..
Order Code:
1700673
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
900mW
:
150°C
:
220mA
:
Dual N Channel
:
6Pins
:
850mV
:
-
:
-
:
25V
:
4.5V
:
SuperSOT
:
5ohm
:
MSL 1 - Unlimited
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Product Overview

The FDC6301N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. It is very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this N-channel FET's can replace several digital transistors, with a variety of bias resistors.
  • Very low level gate drive requirements allowing direct operation in 3V circuits
  • Gate-source Zener for ESD ruggedness
  • -0.5 to 8V Gate to source voltage
  • 0.22A Continuous drain/output current
  • 0.5A Pulsed drain/output current

Applications

Industrial, Power Management

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