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FAIRCHILD SEMICONDUCTOR  FDC6303N  Dual MOSFET, Dual N Channel, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV

FAIRCHILD SEMICONDUCTOR FDC6303N
Technical Data Sheet (178.77KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FDC6303N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
  • Very low level gate drive requirements allowing direct operation in 3V circuits
  • Gate-source Zener for ESD ruggedness
  • Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
  • 8V Gate-source voltage
  • 0.68A Continuous drain/output current
  • 2A Pulsed drain/output current

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
680mA
Drain Source Voltage Vds:
25V
On Resistance Rds(on):
0.45ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
800mV
Power Dissipation Pd:
900mW
Transistor Case Style:
SuperSOT
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
2.27