Low

FDC6303N - 

Dual MOSFET, Dual N Channel, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV

FAIRCHILD SEMICONDUCTOR FDC6303N

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
FDC6303N
Order Code:
1467964
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
900mW
:
150°C
:
680mA
:
Dual N Channel
:
6Pins
:
800mV
:
-
:
-
:
25V
:
4.5V
:
SuperSOT
:
0.45ohm
:
MSL 1 - Unlimited
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Product Overview

The FDC6303N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
  • Very low level gate drive requirements allowing direct operation in 3V circuits
  • Gate-source Zener for ESD ruggedness
  • Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
  • 8V Gate-source voltage
  • 0.68A Continuous drain/output current
  • 2A Pulsed drain/output current

Applications

Industrial, Power Management