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FAIRCHILD SEMICONDUCTOR  FDC6318P  Dual MOSFET, Dual P Channel, 2.5 A, -12 V, 90 mohm, -4.5 V, 700 mV

FAIRCHILD SEMICONDUCTOR FDC6318P
Technical Data Sheet (236.22KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FDC6318P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance.
  • High performance Trench technology for extremely low RDS (ON)
  • Small footprint
  • Low profile
  • ±8V Gate to source voltage
  • -2.5A Continuous drain/output current
  • -7A Pulsed drain/output current

Product Information

Transistor Polarity:
Dual P Channel
Continuous Drain Current Id:
2.5A
Drain Source Voltage Vds:
-12V
On Resistance Rds(on):
0.09ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
700mV
Power Dissipation Pd:
960mW
Transistor Case Style:
SuperSOT
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0001

Associated Products