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FAIRCHILD SEMICONDUCTOR  FDC6333C..  Dual MOSFET, N and P Channel, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V

FAIRCHILD SEMICONDUCTOR FDC6333C..
Technical Data Sheet (195.63KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FDC6333C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with DC-to-DC converter, load switch and LCD display inverter applications.
  • Low gate charge
  • Small footprint
  • Low profile
  • High performance Trench technology for extremely low RDS (ON)

Product Information

Transistor Polarity:
N and P Channel
Continuous Drain Current Id:
2.5A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.095ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.8V
Power Dissipation Pd:
960mW
Transistor Case Style:
SuperSOT
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

Find similar products  grouped by common attribute

Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Alternatives

DUAL N/P CHANNEL MOSFET, 30V SUPER SOT-6

FAIRCHILD SEMICONDUCTOR

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