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FAIRCHILD SEMICONDUCTOR  FDG6303N  Dual MOSFET, Dual N Channel, 500 mA, 25 V, 0.34 ohm, 4.5 V, 800 mV

FAIRCHILD SEMICONDUCTOR FDG6303N
Technical Data Sheet (510.94KB) EN See all Technical Docs

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Product Overview

The FDG6303N is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
  • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <1.5V)
  • Gate-source Zener for ESD ruggedness
  • Compact industry standard surface-mount-package
  • -0.5 to 8V Gate to source voltage
  • 0.5A Continuous drain/output current
  • 1.5A Pulsed drain/output current

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
500mA
Drain Source Voltage Vds:
25V
On Resistance Rds(on):
0.34ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
800mV
Power Dissipation Pd:
300mW
Transistor Case Style:
SC-70
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0001