Low

FAIRCHILD SEMICONDUCTOR  FDG6320C  Dual MOSFET, N and P Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV

FAIRCHILD SEMICONDUCTOR FDG6320C
Technical Data Sheet (170.48KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FDG6320C is a dual N/P-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
  • Very small package outline
  • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <1.5V)
  • Gate-source Zener for ESD ruggedness

Product Information

Transistor Polarity:
N and P Channel
Continuous Drain Current Id:
220mA
Drain Source Voltage Vds:
25V
On Resistance Rds(on):
4ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
850mV
Power Dissipation Pd:
300mW
Transistor Case Style:
SC-70
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

Find similar products  grouped by common attribute

Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.001