Low

FDG6320C - 

Dual MOSFET, N and P Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV

FDG6320C - Dual MOSFET, N and P Channel, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV

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Manufacturer Part No:
FDG6320C
Order Code:
2438441
Technical Datasheet:
(EN)
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Product Overview

The FDG6320C is a dual N/P-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
  • Very small package outline
  • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <1.5V)
  • Gate-source Zener for ESD ruggedness

Applications

Industrial, Power Management

Warnings

Market demand for this product has caused an extension in lead times, delivery dates may fluctuate

Product Information

:
N and P Channel
:
220mA
:
25V
:
4ohm
:
4.5V
:
850mV
:
300mW
:
SC-70
:
6Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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