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FAIRCHILD SEMICONDUCTOR  FDG6332C  Dual MOSFET, N and P Channel, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V

FAIRCHILD SEMICONDUCTOR FDG6332C
Technical Data Sheet (232.53KB) EN See all Technical Docs

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Product Overview

The FDG6332C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive and packages are impractical. It is suitable for use with DC-to-DC converters, load switch and LCD display inverter applications.
  • Low gate charge
  • High performance Trench technology for extremely low RDS (ON)
  • Small footprint
  • Low profile

Product Information

Transistor Polarity:
N and P Channel
Continuous Drain Current Id:
700mA
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.18ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
1.1V
Power Dissipation Pd:
300mW
Transistor Case Style:
SC-70
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000005

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Dual MOSFET, N and P Channel, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V

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