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FAIRCHILD SEMICONDUCTOR  FDMA1028NZ  Dual MOSFET, Dual N Channel, 3.7 A, 20 V, 68 mohm, 1 V, 1 V

FAIRCHILD SEMICONDUCTOR FDMA1028NZ
Technical Data Sheet (467.31KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FDMA1028NZ is a dual N-channel PowerTrench® MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent N-channel MOSFETs with low ON-state resistance for minimum conduction losses. When connected in the typical common source configuration, bidirectional current flow is possible. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
  • Low profile
  • Halogen-free
  • ±12V Gate to source voltage
  • 3.7A Continuous drain current
  • 6A Pulsed drain current

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
3.7A
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.068ohm
Rds(on) Test Voltage Vgs:
1V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
1.4W
Transistor Case Style:
µFET
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0005

Associated Products