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FAIRCHILD SEMICONDUCTOR  FDN308P  MOSFET Transistor, P Channel, -1.5 A, -20 V, 125 mohm, -4.5 V, -1 V

FAIRCHILD SEMICONDUCTOR FDN308P
Technical Data Sheet (166.50KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FDN308P is a 2.5V specified P-channel MOSFET uses a rugged gate version of Fairchild's advanced PowerTrench® process. It has been optimized for power management and load switch applications with a wide range of gate drive voltage (2.5 to 12V). The SuperSOT™-3 provides low RDS (ON) and 30% higher power handling capability than SOT23 in the same footprint.
  • Fast switching speed
  • High performance Trench technology for extremely low RDS (ON)

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-1.5A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.125ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-1V
Power Dissipation Pd:
500mW
Transistor Case Style:
SuperSOT
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

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