Low

FAIRCHILD SEMICONDUCTOR  FDN339AN  MOSFET Transistor, N Channel, 3 A, 20 V, 0.029 ohm, 4.5 V, 850 mV

FAIRCHILD SEMICONDUCTOR FDN339AN
Technical Data Sheet (159.27KB) EN See all Technical Docs

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Product Overview

The FDN339AN is a 20V N-channel 2.5V Specified PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild's the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
  • Low gate charge
  • High performance trench technology for extremely low RDS (ON)
  • High power and current handling capability

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
3A
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.029ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
850mV
Power Dissipation Pd:
500mW
Transistor Case Style:
SuperSOT
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000037