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FAIRCHILD SEMICONDUCTOR  FDP12N60NZ  Power MOSFET, N Channel, 12 A, 600 V, 0.53 ohm, 10 V, 3 V

FAIRCHILD SEMICONDUCTOR FDP12N60NZ
Technical Data Sheet (708.75KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FDP12N60NZ is a N-channel UniFET™ II high voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest ON-state resistance among the planar MOSFET and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
  • Low gate charge (26nC)
  • Low Crss (12pF)
  • 100% avalanche tested
  • Improved dV/dt capability
  • ESD improved capability

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
12A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
0.53ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
240W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management;
  • Communications & Networking;
  • Lighting;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.004082

Associated Products