MOSFET Transistor, P Channel, 20 A, -30 V, 0.0038 ohm, -10 V, 1.8 V
Image is for illustrative purposes only. Please refer to product description.
- Extended VGSS range (-25V) for battery applications
- HBM ESD protection level of ±3.8kV typical
- High performance trench technology for extremely low RDS (on)
- High power and current handling capability
Power Management, Consumer Electronics