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FAIRCHILD SEMICONDUCTOR  FDT439N  MOSFET Transistor, N Channel, 6.3 A, 30 V, 0.038 ohm, 4.5 V, 670 mV

FAIRCHILD SEMICONDUCTOR FDT439N
Technical Data Sheet (351.06KB) EN See all Technical Docs

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Product Overview

The FDT439N is a 30V N-channel 2.5V specified enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. This very high density process is specially tailored to minimize on-state resistance and provide superior switching performance. It is well suited for low voltage and low current applications. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on advanced planar stripe and DMOS technology. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
  • Switching loss improvements
  • Lower conduction loss
  • 100% Avalanche tested
  • Smaller stored energy in dynamic characteristics
  • A lower gate charge (Qg) performance
  • Improved system reliability in PFC and soft switching topologies

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
6.3A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.038ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
670mV
Power Dissipation Pd:
3W
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Lighting;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.000281

Associated Products