Low

FAIRCHILD SEMICONDUCTOR  FDV305N  MOSFET Transistor, N Channel, 900 mA, 20 V, 220 mohm, 4.5 V, 1 V

FAIRCHILD SEMICONDUCTOR FDV305N
Technical Data Sheet (243.96KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FDV305N is a N-channel MOSFET uses Fairchild's high voltage PowerTrench® process. It has been optimized for load switch and battery protection applications.
  • Low gate charge
  • Fast switching speed
  • High performance Trench technology for extremely low RDS (ON)

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
900mA
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.22ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
350mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000077

Associated Products