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FAIRCHILD SEMICONDUCTOR  FQB27P06TM  MOSFET Transistor, P Channel, -27 A, -60 V, 0.055 ohm, -10 V, -4 V

FAIRCHILD SEMICONDUCTOR FQB27P06TM
Technical Data Sheet (970.29KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FQB27P06TM is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using Fairchild's proprietary, planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications. This product is general usage and suitable for many different applications.
  • Low gate charge
  • 100% Avalanche tested
  • 175°C Rated junction temperature

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-27A
Drain Source Voltage Vds:
-60V
On Resistance Rds(on):
0.055ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
120W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Lighting;
  • Audio;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.002055