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FAIRCHILD SEMICONDUCTOR  FQP50N06L  MOSFET Transistor, N Channel, 52.4 A, 60 V, 0.017 ohm, 10 V, 2.5 V

FAIRCHILD SEMICONDUCTOR FQP50N06L
Technical Data Sheet (780.21KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FQP50N06L is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.
  • Low gate charge
  • 100% Avalanche tested
  • Improved system reliability in PFC and soft switching topologies
  • Switching loss improvements
  • Lower conduction loss
  • 175°C Maximum junction temperature rating

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
52.4A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.017ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.5V
Power Dissipation Pd:
121W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Lighting;
  • Motor Drive & Control;
  • Audio

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002785

Alternatives

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