HGTG12N60C3D - 

IGBT Single Transistor, 24 A, 1.8 V, 104 W, 600 V, TO-247, 3 Pins

HGTG12N60C3D - IGBT Single Transistor, 24 A, 1.8 V, 104 W, 600 V, TO-247, 3 Pins

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Product Overview

The HGTG12N60C3D is a N-channel IGBT with anti-parallel hyperfast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The much lower ON-state voltage drop varies only moderately 25 and 150°C. The IBGT used is the development type TA49123. The diode in anti-parallel with the IGBT is the development type TA49061. It is ideal for high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
  • Short-circuit rating
  • 210ns Fall time @ TJ = 150°C
  • 104W Total power dissipation @ TC = 25°C


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