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FAIRCHILD SEMICONDUCTOR  HGTG12N60C3D  IGBT Single Transistor, 24 A, 1.8 V, 104 W, 600 V, TO-247, 3 Pins

FAIRCHILD SEMICONDUCTOR HGTG12N60C3D
Technical Data Sheet (199.22KB) EN See all Technical Docs

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Product Overview

The HGTG12N60C3D is a N-channel IGBT with anti-parallel hyperfast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The much lower ON-state voltage drop varies only moderately 25 and 150°C. The IBGT used is the development type TA49123. The diode in anti-parallel with the IGBT is the development type TA49061. It is ideal for high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
  • Short-circuit rating
  • 210ns Fall time @ TJ = 150°C
  • 104W Total power dissipation @ TC = 25°C

Product Information

DC Collector Current:
24A
Collector Emitter Saturation Voltage Vce(on):
1.8V
Power Dissipation Pd:
104W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00567

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