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FAIRCHILD SEMICONDUCTOR  NDS9948  Dual MOSFET, Dual P Channel, -2.3 A, -60 V, 250 mohm, -10 V, -1.5 V

FAIRCHILD SEMICONDUCTOR NDS9948
Technical Data Sheet (317.77KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The NDS9948 is a dual P-channel MOSFET produced using PowerTrench® process. It has been optimized for applications requiring a wide range of gate drive voltage ratings (4.5 to 20V). The device is suitable for use with load switch and battery protection applications.
  • Low gate charge
  • Fast switching speed
  • High performance Trench technology for extremely low RDS (ON)
  • High power and current handling capability
  • ±20V Gate to source voltage
  • 2A Continuous drain current
  • 1.6A Pulsed drain current

Product Information

Transistor Polarity:
Dual P Channel
Continuous Drain Current Id:
-2.3A
Drain Source Voltage Vds:
-60V
On Resistance Rds(on):
0.25ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-1.5V
Power Dissipation Pd:
2W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000215