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FUJI ELECTRIC  2MBI150U4A-120-50  IGBT Array & Module Transistor, N Channel, 200 A, 2.3 V, 735 W, 1.2 kV, Module

FUJI ELECTRIC 2MBI150U4A-120-50
Technical Data Sheet (416.93KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2MBI150U4A-120-50 is a 1200V IGBT Module with Trench Half-Bridge designed for uninterruptible power supply, welding and lasers. Dual IGBT module is suitable for use in half-bridge and H-bridge configurations.
  • Screw-thread power terminals
This product shall be used within its absolute maximum rating (voltage, current and temperature). This product may be broken in case of using beyond the ratings.

Product Information

Transistor Polarity:
N Channel
DC Collector Current:
200A
Collector Emitter Saturation Voltage Vce(on):
2.3V
Power Dissipation Pd:
735W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
Module
No. of Pins:
7Pins
Operating Temperature Max:
150°C
Product Range:
-
SVHC:
To Be Advised

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Applications

  • Motor Drive & Control;
  • Power Management;
  • Industrial

Legislation and Environmental

Country of Origin:
Japan

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.18

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