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INFINEON  BSC159N10LSF G  MOSFET Transistor, N Channel, 63 A, 100 V, 12.2 mohm, 10 V, 1.85 V

INFINEON BSC159N10LSF G
Technical Data Sheet (666.73KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSC159N10LSF G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS (on) and FOM (Figure of Merit). The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
  • Excellent switching performance
  • Environmentally-friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy to design

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
63A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.0122ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.85V
Power Dissipation Pd:
114W
Transistor Case Style:
PG-TSDSON
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Communications & Networking;
  • Industrial;
  • Audio

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000141