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INFINEON  IPA60R385CPXKSA1  Power MOSFET, N Channel, 9 A, 650 V, 0.35 ohm, 10 V, 3 V

INFINEON IPA60R385CPXKSA1
Technical Data Sheet (286.49KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IPA60R385CP is a N-channel power MOSFET with 650VDS drain source voltage. CoolMOS™ CP, Infineon's fifth series of CoolMOS™ is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.
  • Lowest figure of merit Ron x Qg
  • Ultra low gate charge
  • Extreme dV/dt rate
  • Ultra low R DS (on), ultra low gate charge, very fast switching
  • Vth 3 V, g fs very high, internal R g very low
  • High current capability
  • Significant reduction of conduction and switching losses
  • High power density and efficiency for superior power conversion systems
  • Best-in-class performance ratio

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
9A
Drain Source Voltage Vds:
650V
On Resistance Rds(on):
0.35ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
31W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Communications & Networking;
  • Industrial;
  • Alternative Energy;
  • Portable Devices

Also Known As

IPA60R385CP , SP000089316

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00195

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