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INFINEON  IPB017N06N3GATMA1  MOSFET Transistor, N Channel, 180 A, 60 V, 1.3 mohm, 10 V, 3 V

INFINEON IPB017N06N3GATMA1
Technical Data Sheet (661.87KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IPB017N06N3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • Very low voltage overshoot
  • Superior thermal resistance

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
180A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.0013ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
250W
Transistor Case Style:
TO-263
No. of Pins:
7Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Alternative Energy;
  • Motor Drive & Control;
  • Industrial

Also Known As

IPB017N06N3 G , SP000434404

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002