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INFINEON  IPB60R299CPATMA1  Power MOSFET, N Channel, 11 A, 650 V, 0.27 ohm, 10 V, 3 V

INFINEON IPB60R299CPATMA1
Technical Data Sheet (289.48KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IPB60R299CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. It is specially designed for hard switching SMPS topologies.
  • Low figure-of-merit(FOM) RON x Qg
  • Extreme dV/dt rated
  • High peak current capability
  • Qualified according to JEDEC for target applications
  • Ultra low RDS (ON)
  • Very fast switching
  • Internal Rg very low
  • High current capability
  • Significant reduction of conduction and switching losses
  • High power density and efficiency for superior power conversion systems
  • Best-in-class performance ratio

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
11A
Drain Source Voltage Vds:
650V
On Resistance Rds(on):
0.27ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
96W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management;
  • Communications & Networking;
  • Consumer Electronics;
  • Alternative Energy

Also Known As

IPB60R299CP , SP000301161

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00143

Associated Products