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INFINEON  IPD031N03LGATMA1  MOSFET Transistor, N Channel, 90 A, 30 V, 2.6 mohm, 10 V, 1 V

INFINEON IPD031N03LGATMA1
Technical Data Sheet (671.03KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IPD031N03L G is a 30V N-channel Power MOSFET for switched mode power supplies (SMPS). OptiMOS™ 30V MOSFET sets new standards in power density and energy efficiency. This is tailored to the needs of power management in notebook by improved EMI behaviour as well as increased battery life.
  • Fast switching MOSFET
  • Increased battery lifetime
  • Improved EMI behaviour making external snubber networks obsolete
  • Saving space
  • Reducing power losses
  • Superior thermal resistance

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
90A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.0026ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
94W
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Computers & Computer Peripherals;
  • Motor Drive & Control;
  • LED Lighting

Also Known As

IPD031N03L G , SP000680554

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000381