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INFINEON  IPD053N08N3GATMA1  MOSFET Transistor, N Channel, 90 A, 80 V, 4.4 mohm, 10 V, 2.8 V

INFINEON IPD053N08N3GATMA1
Technical Data Sheet (345.93KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IPD053N08N3 G is a N-channel OptiMOS™ 3 Power Transistor with superior thermal resistance, excellent gate charge x R DS(ON) product (FOM) and superior thermal resistance. Optimized technology for DC/DC converters. Ideal for high-frequency switching and synchronous rectification.
  • Dual sided cooling
  • Very low on resistance
  • 100% Avalanche tested
  • Low parasitic inductance
  • Halogen-free

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
90A
Drain Source Voltage Vds:
80V
On Resistance Rds(on):
0.0044ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.8V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Communications & Networking;
  • Motor Drive & Control

Also Known As

IPD053N08N3 G , SP001127818

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00042