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INFINEON  IPP50R299CP  MOSFET Transistor, N Channel, 12 A, 550 V, 0.27 ohm, 10 V, 3 V

INFINEON IPP50R299CP
Technical Data Sheet (274.98KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IPP50R299CP is a CoolMOS™ N-channel Power MOSFET with ultra-low gate charge and high peak current capability.
  • Extreme dV/dt rate
  • Ultra low RDS (ON), very fast switching
  • Very low internal Rg
  • High peak current capability
  • Significant reduction of conduction and switching losses
  • High power density and efficiency for superior power conversion systems
  • Best-in-class performance ratio
  • Qualified according to JEDEC for target applications
  • Green device

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
12A
Drain Source Voltage Vds:
550V
On Resistance Rds(on):
0.27ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
104W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Communications & Networking;
  • Consumer Electronics;
  • Computers & Computer Peripherals

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00195

Associated Products