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INFINEON  SPB17N80C3ATMA1  Power MOSFET, N Channel, 17 A, 800 V, 0.25 ohm, 10 V, 3 V

INFINEON SPB17N80C3ATMA1
Technical Data Sheet (320.76KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The SPB17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is designed for high DC bulk voltage and switching applications.
  • New revolutionary high voltage technology
  • Extreme dV/dt rated
  • High peak current capability
  • Qualified according to JEDEC for target applications
  • Ultra low effective capacitance
  • Low specific ON-state resistance
  • Very low energy storage in output capacitance (Eoss)@400V
  • Field proven CoolMOS™ quality

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
17A
Drain Source Voltage Vds:
800V
On Resistance Rds(on):
0.25ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
227W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Consumer Electronics;
  • Power Management;
  • Lighting;
  • Alternative Energy

Also Known As

SPB17N80C3 , SP000013370

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00143

Associated Products