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INFINEON  AUIRF7343Q  Dual MOSFET, N and P Channel, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V

INFINEON AUIRF7343Q
Technical Data Sheet (223.13KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The AUIRF7343Q is a dual N/P-channel MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this MOSFET is 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in wide variety of applications. The efficient package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface-mount can dramatically reduce board space.
  • Advanced planar technology
  • Ultra low ON-resistance
  • Logic level gate drive
  • Surface-mount device

Product Information

Transistor Polarity:
N and P Channel
Continuous Drain Current Id:
4.7A
Drain Source Voltage Vds:
55V
On Resistance Rds(on):
0.043ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
2W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Automotive;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0005

Associated Products