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INFINEON  IRF1104PBF  MOSFET Transistor, N Channel, 100 A, 40 V, 9 mohm, 10 V, 4 V

INFINEON IRF1104PBF
INFINEON IRF1104PBF
Technical Data Sheet (185.71KB) EN See all Technical Docs

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INFINEON IRF1104PBF
INFINEON IRF1104PBF

Product Overview

The IRF1104PBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
  • Advanced process technology
  • Dynamic dV/dt rating
  • Fully avalanche rating

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
100A
Drain Source Voltage Vds:
40V
On Resistance Rds(on):
0.009ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
170W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Commercial;
  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002041

Associated Products