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INFINEON  IRF1407PBF  MOSFET Transistor, N Channel, 130 A, 75 V, 7.8 mohm, 10 V, 4 V

INFINEON IRF1407PBF
INFINEON IRF1407PBF
Technical Data Sheet (266.34KB) EN See all Technical Docs

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INFINEON IRF1407PBF
INFINEON IRF1407PBF

Product Overview

The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
  • Advanced process technology
  • Dynamic dV/dt rating
  • Repetitive avalanche allowed up to Tjmax

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
130A
Drain Source Voltage Vds:
75V
On Resistance Rds(on):
0.0078ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
330W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Motor Drive & Control;
  • Automotive;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002041

Alternatives

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