Low

INFINEON  IRF2805PBF  MOSFET Transistor, N Channel, 175 A, 55 V, 4.7 mohm, 10 V, 4 V

INFINEON IRF2805PBF
INFINEON IRF2805PBF
Technical Data Sheet (264.56KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

INFINEON IRF2805PBF
INFINEON IRF2805PBF

Product Overview

The IRF2805PBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. It features 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable device for use in a wide variety of applications.
  • Advanced process technology
  • Repetitive avalanche allowed up to Tjmax

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
175A
Drain Source Voltage Vds:
55V
On Resistance Rds(on):
0.0047ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
330W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Motor Drive & Control;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Alternatives

MOSFET Transistor, N Channel, 210 A, 60 V, 3 mohm, 10 V, 4 V

INFINEON

200 in stock

Price for: Each

1+ US$4.05 25+ US$2.695 100+ US$2.314 250+ US$1.975 more…

Buy

N CHANNEL MOSFET, 60V, 210A, TO-220AB

INFINEON

8:  in stock

Price for: Each

1+ US$4.177 10+ US$2.864 100+ US$2.286 250+ US$2.145 more…

Buy

Associated Products