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INFINEON  IRF2807ZPBF  MOSFET Transistor, N Channel, 89 A, 75 V, 9.4 mohm, 10 V, 4 V

INFINEON IRF2807ZPBF
INFINEON IRF2807ZPBF
Technical Data Sheet (399.49KB) EN See all Technical Docs

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INFINEON IRF2807ZPBF
INFINEON IRF2807ZPBF

Product Overview

The IRF2807ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. It is also suitable for AC-to-DC, consumer full-bridge, full-bridge and push-pull applications.
  • Advanced process technology
  • Ultra-low ON-resistance
  • Dynamic dV/dt rating
  • Repetitive avalanche allowed up to Tjmax

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
89A
Drain Source Voltage Vds:
75V
On Resistance Rds(on):
0.0094ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
170W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

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