Low

INFINEON  IRF5210PBF  MOSFET Transistor, P Channel, -40 A, -100 V, 60 mohm, -10 V, -4 V

INFINEON IRF5210PBF
Technical Data Sheet (189.88KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area.
  • Advanced Process Technology
  • New Ultra Low On-Resistance
  • Fast Switching
  • Dynamic dv/dt Rating
  • Fully Avalanche Rated

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-40A
Drain Source Voltage Vds:
-100V
On Resistance Rds(on):
0.06ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
200W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Audio;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Mexico

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00204