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INFINEON  IRF630NPBF  MOSFET Transistor, N Channel, 9.3 A, 200 V, 300 mohm, 10 V, 4 V

INFINEON IRF630NPBF
INFINEON IRF630NPBF

Image is for illustrative purposes only. Please refer to product description.

INFINEON IRF630NPBF
INFINEON IRF630NPBF

Product Overview

The IRF630NPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
  • 175°C Operating temperature
  • Fully avalanche rated
  • Dynamic dV/dt rating
  • Easy to parallel
  • Simple drive requirement

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
9.3A
Drain Source Voltage Vds:
200V
On Resistance Rds(on):
0.3ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
82W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Mexico

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001815

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