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IRF640NPBF - 

MOSFET Transistor, N Channel, 18 A, 200 V, 150 mohm, 10 V, 4 V

IRF640NPBF - MOSFET Transistor, N Channel, 18 A, 200 V, 150 mohm, 10 V, 4 V
IRF640NPBF - MOSFET Transistor, N Channel, 18 A, 200 V, 150 mohm, 10 V, 4 V

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRF640NPBF
Order Code:
8648379
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The IRF640NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is 200V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 150mohm
  • Power dissipation Pd of 150W at 25°C
  • Continuous drain current Id of 18A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C

Applications

Power Management, Industrial, Portable Devices, Consumer Electronics

Product Information

:
N Channel
:
18A
:
200V
:
0.15ohm
:
10V
:
4V
:
150W
:
TO-220AB
:
3Pins
:
175°C
:
-
:
-
:
-
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Awaiting Delivery

Available for backorder to lead times shown

 
Check stock and lead times

2,183 will be available for delivery on Feb 2, 2018

1,150 will be available for delivery on Mar 2, 2018

2,050 will be available for delivery on Mar 9, 2018

More stock available week commencing 3/19/18

Contact me when back in stock

Alternatives Available

1688597 - MOSFET Transistor, N Channel, 25 A, 200 V, 60 mohm, 10 V, 3 V

US$0.941 US$ 0.94
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25 + US$0.82
100 + US$0.628
250 + US$0.553
1000 + US$0.386
4000 + US$0.382
10000 + US$0.378
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